Electronic switching in phase-change memories

被引：502
|
作者：
Pirovano, A [1 ]
Lacaita, AL
Benvenuti, A
Pellizzer, F
Bez, R
机构：
[1] STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy
[2] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[3] Politecn Milan, IFN, CNR Sez Milano, I-20133 Milan, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期
关键词：
chalcogenide; nonvolatile memories; phase-change memory (PCM) devices;
D O I：
10.1109/TED.2003.823243
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge2Sb2Te5 resistor, in good agreement with measurements performed on test devices.
引用
收藏
页码：452 / 459
页数：8
相关论文
共 50 条
  • [1] Phase-change memories
    Bez, R
    Pirovano, A
    Pellizzer, F
    [J]. MATERIALS FOR INFORMATION TECHNOLOGY: DEVICES, INTERCONNECTS AND PACKAGING, 2005, : 177 - 188
  • [2] Phase-Change Memories
    不详
    [J]. MATERIALWISSENSCHAFT UND WERKSTOFFTECHNIK, 2008, 39 (11) : A1 - A1
  • [3] Phase-change memories
    Lacaita, Andrea L.
    Wouters, Dirk J.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (10): : 2281 - 2297
  • [4] Phase-Change Memories
    不详
    [J]. JOURNAL OF APPLIED POLYMER SCIENCE, 2009, 111 (02) : A1 - A1
  • [5] Phase-Change and Redox-Based Resistive Switching Memories
    Wouters, Dirk J.
    Waser, Rainer
    Wuttig, Matthias
    [J]. PROCEEDINGS OF THE IEEE, 2015, 103 (08) : 1274 - 1288
  • [6] Transient Simulation of Delay and Switching Effects in Phase-Change Memories
    Lavizzari, Simone
    Ielmini, Daniele
    Lacaita, Andrea L.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) : 3257 - 3264
  • [7] Assessment of threshold switching dynamics in phase-change chalcogenide memories
    Ielmini, D
    Lacaita, AL
    Mantegazza, D
    Pellizzer, F
    Pirovano, A
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 897 - 900
  • [8] Electronic switching effect in phase-change memory cells
    Pirovano, A
    Lacaita, AL
    Merlani, D
    Benvenuti, A
    Pellizzer, E
    Bez, R
    [J]. INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 923 - 926
  • [9] Engineering - Phase-change materials for systems. electronic memories
    Atwood, Greg
    [J]. SCIENCE, 2008, 321 (5886) : 210 - 211
  • [10] Phase-Change Memories on a Diet
    Salinga, Martin
    Wuttig, Matthias
    [J]. SCIENCE, 2011, 332 (6029) : 543 - 544
12345