Valence surface electronic states on Ge(001)

被引：36

作者：

Radny, M. W. ^{[1
]}

Shah, G. A. ^{[1
]}

Schofield, S. R. ^{[1
]}

Smith, P. V. ^{[1
]}

Curson, N. J. ^{[2
,3
]}

机构：

[1] Univ Newcastle, Sch Math & Phys Sci, Callaghan, NSW 2308, Australia

[2] UCL, London Ctr Nanotechnol, London WC1H OAH, England

[3] UCL, Dept Elect & Elect Engn, London WC1H OAH, England

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 100卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.100.246807

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E-F). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E-F, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.

引用

页数：4

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