Aluminium nitride thin films deposited by DC reactive magnetron sputtering

被引：44
|
作者：
Dimitrova, V
Manova, D
Paskova, T
Uzunov, T
Ivanov, N
Dechev, D
机构：
[1] Univ Rousse, Dept Phys, Rousse 7017, Bulgaria
[2] Univ Sofia, Dept Solid State Phys, Sofia 1164, Bulgaria
[3] Tech Univ Sliven, Lab New Technol, Sliven 8800, Bulgaria
来源：
VACUUM | 1998年 / 51卷 / 02期
关键词：
D O I：
10.1016/S0042-207X(98)00150-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AlN-films prepared by de reactive magnetron sputtering. AlN in an Ar+N-2 gas mixture have been prepared and their microstructure, hardness, refractive index and IR transmittance examined. At lambda = 640 nm the refractive index was 1.93 and k = 3 x 10(-3); high transmission occurred between [??] structure and oxygen on microhardness is discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：161 / 164
页数：4
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