Electric properties of nanoscale contacts on Si(111) surfaces

被引：20

作者：

Hasunuma, R ^{[1
]}

Komeda, T

Tokumoto, H

机构：

[1] Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Tsukuba, Ibaraki 305, Japan

[2] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

STM; indentation; point contact; Si(111); Si wire; electric properties;

D O I：

10.1016/S0169-4332(98)00030-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the electric properties of nanoscale contacts on Si(111)-7 X 7 surfaces with a scanning tunneling microscope (STM). The contacts between a W STM tip and Si substrates exhibit Schottky-type rectification, whose properties are obviously different from the conventional plane diodes. The current variation during tip retraction from the contact region indicates the influence of Si atoms between the tip and substrates, as well as the contact size effects, which result from the Si atom removal with the present experimental technique. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：84 / 89

页数：6

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