Modeling of noise for p-channel DG-FinFETs

被引：2
|
作者：
Pandit, Srabanti [1 ]
Syamal, Binit [1 ]
Sarkar, C. K. [1 ]
机构：
[1] Jadavpur Univ, Nano Device Simulat Lab, Dept Elect & Telecommun Engn, Kolkata 700032, India
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 06期
关键词：
LOW-FREQUENCY NOISE; THERMAL NOISE; UNIFIED MODEL; 1/F NOISE; TRANSISTORS; MOSFETS; FLICKER; CHARGE;
D O I：
10.1016/j.microrel.2011.12.034
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The noise performance of p-channel Double Gate FinFETs has been studied with varying structural parameters. The effects of mobility degradation due to velocity saturation, carrier heating and channel length modulation have been taken into consideration for an accurate modeling of noise. The dependence of mobility fluctuations on the inversion carrier density has been incorporated. This has been validated by the experimental results. The noise behavior of p-channel device has been compared to that of a corresponding n-channel device. It has been observed that noise in p-channel device is comparatively higher due to higher number of oxide-trap density in it. Further, it has been noted that with the same trap density in both p-channel and n-channel device, the flicker noise in the p-channel device is lower than that of the corresponding n-channel device. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：984 / 988
页数：5
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