A 3-V variable-gain amplifier in Si/SiGe BiCMOS technology for 5-GHz WLAN applications

被引：3
|
作者：
Alimenti, F [1 ]
Palazzari, V [1 ]
Roselli, L [1 ]
Scorzoni, A [1 ]
机构：
[1] Dipartimento Ingn Elettron & Informaz, I-06125 Perugia, Italy
来源：
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2005年 / 15卷 / 05期
关键词：
SiGe; BiCMOS analog integrated circuits; heterojunction bipolar transistors; MMIC amplifiers;
D O I：
10.1002/mmce.20110
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
A variable-gain class-A amplifier for 5-GHz wireless local area networks (WLAN) applications is developed using commercial 0.35-mu m Si/SiGe BiCMOS technology. The amplifier is based on a cascode differential pair and is fully integrated with input and output matching networks. The design starts with application of the Cripps' method and it is further refined by nonlinear harmonic-balance simulations. These simulations are in good agreement with the measurements carried out at wafer level on a realized prototype. (c) 2005 Wiley Periodicals, Inc.
引用
收藏
页码：412 / 422
页数：11
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