Formation of dysprosium silicide wires on Si(001)

被引：144
|
作者：
Preinesberger, C [1 ]
Vandre, S [1 ]
Kalka, T [1 ]
Dahne-Prietsch, M [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 12期
关键词：
D O I：
10.1088/0022-3727/31/12/001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present scanning tunnelling microscopy results of thin dysprosium silicide films grown on Si(001) 2x1. At submonolayer coverages, up to 2000 Angstrom long wires are formed in the (110) direction of the Si(001) surface. Depending on Dy exposure and annealing conditions, both wire assemblies and free-standing wires can be grown. At higher coverages, three-dimensional clusters with rectangular shapes are formed.
引用
收藏
页码：L43 / L45
页数：3
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