Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

被引：23
|
作者：
Chen, WD
Li, XQ
Duan, LH
Xie, XL
Cui, YD
机构：
[1] CHINESE ACAD SCI, STATE KEY LAB SURFACE PHYS, BEIJING 100083, PEOPLES R CHINA
[2] CHINESE ACAD SCI, CTR MICROELECT, BEIJING 100010, PEOPLES R CHINA
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/0169-4332(96)00345-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.
引用
收藏
页码：592 / 595
页数：4
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