Control of the Synthesis and Composition of Semiconductors. Low-Defect Silicon Carbide and Low-Dimensional Cadmium Selenide

被引：0

作者：

Zlomanov, V. P. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, Moscow, Russia

来源：

PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 01期

关键词：

semiconductors; purity; homogeneity; silicon carbide; cadmium selenide; QUANTUM DOTS; TETRAPODS; GROWTH;

D O I：

10.1134/S1063783420010382

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The details of the controlled synthesis and basic performances determining the properties of the semiconductor substances-composition, structure, size and morphology of the particles forming them-were discussed. The nontrivial, but important for the functional use of semiconductors, criteria of purity and homogeneity were expressed. The noted details of the materiology of semiconductors were discussed with the example of the synthesis of low-defect wafers of silicon carbide, and also low-dimensional powders of cadmium selenide.

引用

页码：8 / 12

页数：5

共 27 条

[21] Lithium monosilicide (LiSi), a low-dimensional silicon-based material prepared by high pressure synthesis: NMR and vibrational spectroscopy and electrical properties characterization
Stearns, LA
Gryko, J
Diefenbacher, J
Ramachandran, GK
McMillan, PF
JOURNAL OF SOLID STATE CHEMISTRY, 2003, 173 (01) : 251 - 258
[22] New Trends in Wide Bandgap Semiconductors: Synthesis of Single Crystalline Silicon Carbide Layers by Low Pressure Chemical Vapor Deposition Technique on P-Type Silicon (100 and/or 111) and their Characterization
Iqbal, F.
Ali, A.
Mehmood, A.
Yasin, M.
Raja, A.
Gerges, A. S.
Baang, S.
Asghar, M.
Hasan, M. A.
ADVANCED MATERIALS XI, 2010, 442 : 195 - +
[23] COFACIAL ASSEMBLY OF PARTIALLY OXIDIZED METALLOMACROCYCLES AS AN APPROACH TO CONTROLLING LATTICE ARCHITECTURE IN LOW-DIMENSIONAL MOLECULAR-SOLIDS - SYNTHESIS AND PROPERTIES OF COFACIALLY JOINED SILICON AND GERMANIUM HEMIPORPHYRAZINE POLYMERS
DIRK, CW
MARKS, TJ
INORGANIC CHEMISTRY, 1984, 23 (25) : 4325 - 4332
[24] A new direction in the creation of ceramic materials with a specified composition and structure. Part II. Theoretical foundations of low-temperature synthesis of SiC from gels and practical realization of this process in the technology of ceramics and refractories - 2. Mechanochemical synthesis of silicon carbide and oxynitride in modifying powders of refractory compounds
Semchenko, GD
Opryshko, IN
Starolat, EE
Vernigora, KP
REFRACTORIES AND INDUSTRIAL CERAMICS, 1999, 40 (11-12) : 489 - 494
[25] A new direction in the creation of ceramic materials with a specified composition and structure. ParT II. Theoretical foundations of low-temperature synthesis of SiC from gels and practical realization of this process in the technology of ceramics and refractories 2. Mechanochemical synthesis of silicon carbide and oxynitride in modifying powders of refractory compounds
G. D. Semchenko
I. N. Opryshko
E. E. Starolat
K. P. Vernigora
Refractories and Industrial Ceramics, 1999, 40 : 489 - 494
[26] A new direction in the creation of ceramic materials with a specified phase composition and structure. Part II. Theoretical foundations of low-temperature synthesis of SiC from gels and practical realization of this process in the technology of ceramics and refractories. 3. Phase formation in hot pressing of modified powders of silicon carbide and mixtures of them with sintering additives and the structure and properties of the materials
Semchenko, GD
Opryshko, IN
Angolenko, LA
REFRACTORIES AND INDUSTRIAL CERAMICS, 2000, 41 (1-2) : 8 - 15
[27] A new direction in the creation of ceramic materials with a specified phase composition and structure. Part II. Theoretical foundations of low-temperature synthesis of SiC from gels and practical realization of this process in the technology of ceramics and refractories. 3. Phase formation in hot pressing of modified powders of silicon carbide and mixtures of them with sintering additives and the structure and properties of the materials
G. D. Semchenko
I. N. Opryshko
L. A. Angolenko
Refractories and Industrial Ceramics, 2000, 41 : 8 - 15

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