TSV CMP Processes on Bonded Wafers

被引：0

作者：

Mao, Yingjun ^{[1
]}

Ren, Qin ^{[1
]}

Loh, Woon Leng ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, 11 Sci Pk Rd,Sci Pk 2, Singapore 117685, Singapore

来源：

2015 IEEE 17TH ELECTRONICS PACKAGING AND TECHNOLOGY CONFERENCE (EPTC) | 2015年

关键词：

TSV; CMP; Bonded wafers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TSV CMP processes on bonded wafers include TSV backside CMP revealing process and TSV Via last CMP process. The patterned and thinned device wafers are temporarily bonded on silicon carrier, which results in huge TTV (total thickness variation). Such TTV makes CMP processes more challenging. In this paper. CMP processes on bonded wafers are studied. Cu and barrier layer are successfully and fully removed, but the variation of underneath oxide layer exists because bonding and subsequent processes change the topography of the bonded wafers.

引用

页数：3

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