A macromodel in SMART SPICE to study MOSFET degradations with the CP technique

被引：2

作者：

Djahli, F ^{[1
]}

Kaabi, L

机构：

[1] Univ Ferhat Abbas, Inst Elect, Setif 19000, Algeria

[2] Inst Natl Sci Appl, Phys Mat Lab, URA CNRS 358, F-69621 Villeurbanne, France

来源：

MICROELECTRONICS JOURNAL | 1998年 / 29卷 / 11期

关键词：

MOSFET degradation; charge pumping technique; macro model;

D O I：

10.1016/S0026-2692(97)00022-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we have simulated the experimental charge pumping technique by the development and implementation of a macro model in the electrical simulator SMART SPICE on a personal computer. This macro model takes into account all of the geometrical and electrical parameters of the studied transistor and gives their mathematical expressions. It also gives the different curves of the charge pumping current, which can be obtained experimentally by this technique for different parameters, before or after different ageing stresses. The results obtained are compared with recent experimental results. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：805 / 811

页数：7

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