Simulated and experimental results from a room temperature silicon X-ray pixel detector

被引:0
|
作者
Mathieson, K [1 ]
Bates, R
Iles, GM
Manolopoulos, S
O'Shea, V
Passmore, S
Prydderch, ML
Rahman, M
Seller, P
Smith, KM
Thomas, SL
Watt, J
Whitehill, C
机构
[1] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
[2] Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England
[3] Univ London Imperial Coll Sci Technol & Med, London SW7 2BZ, England
关键词
X-ray imaging; pixel detectors; silicon; GaAs; spectroscopy; bump bonding; simulation; MCNP; IMPACT;
D O I
10.1016/S0168-9002(00)01113-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Simulated and experimental results are presented from a silicon X-ray pixel detector which is bump bonded to a PACS pixel array of read-out electronics. When coupled to a matching, fully depleted silicon detector the pre-amplifier is observed to have a linear response up to 80 keV, and a pulse height resolution of around 1 keV FWHM over the range 13-60 keV. The Monte-Carlo N-Particle code has been used to simulate the detector response under illumination from a variety of energies. The excellent agreement observed between simulation and experiment illustrates the predictive abilities of such packages. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:191 / 196
页数:6
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