Dislocation nucleation rates during submonolayer growth of heteroepitaxial thin films

被引：11
|
作者：
Hamilton, JC
机构：
[1] Sandia National Laboratories, Livermore
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.55.R7402
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dislocation nucleation rates during submonolayer heteroepitaxial island growth an calculated using a two-dimensional Frenkel-Kontorova (FK) model combined with transition-state theory. A method for determining effective FK adatom pair potentials is tested using embedded atom method (EAM) potentials. Calculated prefactors and activation energies for dislocation nucleation are in excellent agreement with values from a full EAM molecular-dynamics simulation demonstrating the validity of this approach.
引用
收藏
页码：R7402 / R7405
页数：4
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