Room Temperature Deposited Transparent Conducting InZnO:Ga thin films by Non-Reactive RF-Magnetron Sputtering

Transparent-conducting InZnO: Ga (IZO: Ga) thin films have been developed on glass substrate at room temperature (300K) by nonreactive RF-Magnetron sputtering using sintered ceramic disc of InZnO: Ga target (In-10 wt%, Ga -3wt% and Zn -87wt%). The novelty of very thin IZO: Ga films are low resistivity (1.5x10(-3) Omega. cm) and low sheet resistance (20 Omega/sic) with average optical transmittance 86%, large Haze factor (> 70%) and high figure of merit value (1.1x10(18)) respectively. RF-sputtered IZO: Ga films shows amorphous nature, smooth and crack-free surface morphology and topography with predominant metallic phase. Heat treated samples becomes crystalline, topography becomes more aligned (U-type) and surface roughness increases. (C) 2017 Elsevier Ltd. All rights reserved.