Room Temperature Deposited Transparent Conducting InZnO:Ga thin films by Non-Reactive RF-Magnetron Sputtering

被引：0
|
作者：
Das, Himadri Sekhar [1 ]
Dey, Arka [2 ]
Ray, Partha Pratim [2 ]
Das, Rajesh [1 ]
机构：
[1] Haldia Inst Technol, Dept Appl Sci, Haldia 721657, India
[2] Jadavpur Univ, Dept Phys, Kolkata 700032, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2017年 / 4卷 / 14期
关键词：
Transparent Conducting Ga-doped Indium Zinc Oxide; Rf-Magnetron Sputtering; Room Temperature; Electrical Sheet Resistance; Haze factor; Surface Morphology; Surface Topography; CHEMICAL-VAPOR-DEPOSITION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent-conducting InZnO: Ga (IZO: Ga) thin films have been developed on glass substrate at room temperature (300K) by nonreactive RF-Magnetron sputtering using sintered ceramic disc of InZnO: Ga target (In-10 wt%, Ga -3wt% and Zn -87wt%). The novelty of very thin IZO: Ga films are low resistivity (1.5x10(-3) Omega. cm) and low sheet resistance (20 Omega/sic) with average optical transmittance 86%, large Haze factor (> 70%) and high figure of merit value (1.1x10(18)) respectively. RF-sputtered IZO: Ga films shows amorphous nature, smooth and crack-free surface morphology and topography with predominant metallic phase. Heat treated samples becomes crystalline, topography becomes more aligned (U-type) and surface roughness increases. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：12610 / 12614
页数：5
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