Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films

被引：6

作者：

Wang, Weiguang ^{[1
]}

Feng, Xianjin ^{[1
]}

Luan, Caina ^{[1
]}

Ma, Jin ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2018年 / 44卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Films; Electrical properties; TiO2; TRANSITION;

D O I：

10.1016/j.ceramint.2017.10.214

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Single crystalline homoepitaxial Nb doped TiO2 (TiO2:Nb) films were deposited on rutile TiO2 (r-TiO2) (001) substrates by metal organic chemical vapor deposition (MOCVD). Effect of Nb doping on structural and electrical properties of the films were studied. The maximum Hall mobility of the obtained films reached as high as 14.0 cm(2) V-1 s(-1) and the lowest resistivity of the films was 1.9 x 10(-1) Omega cm which was 7 orders of magnitude lower than that of pristine r-TiO2. The obtained films were single crystalline r-TiO2 epitaxially grown along the (001) orientation. The relationship between the structural and electrical properties was discussed. TiO2:Nb films with high mobilities may have many potential applications in the field of transparent electronic devices.

引用

页码：2432 / 2435

页数：4

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