Dephasing by electron-phonon interaction in an AB ring with an embedded quantum dot

被引：3

作者：

Ueda, A ^{[1
]}

Eto, M ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2005年 / 242卷 / 06期

关键词：

D O I：

10.1002/pssb.200460768

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the dephasing effect on the transport properties in an Aharonov-Bohm ring with an embedded quantum dot, due to the electron-phonon interaction. The differential conductance is calculated under finite bias using Keldysh Green function. The electron-phonon interaction is treated (i) by the canonical transformation, or (ii) by the second-order perturbation. By the latter method, we find that the Fano resonance is suppressed by the electron-phonon interaction and that the suppression increases with increasing bias voltage. The calculations by the former method do not yield the bias-voltage dependence of the dephasing effect. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1219 / 1223

页数：5

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