Investigation of LaAlO3 pervoskite compound for optoelectronic and thermoelectric devices under pressure

被引:40
|
作者
Yaseen, Muhammad [1 ]
Ashfaq, Amna [1 ]
Akhtar, Anam [1 ]
Asghar, Rida [1 ]
Ambreen, Hina [1 ]
Butt, Mehwish Khalid [1 ]
Noreen, Saima [2 ]
Rehman, Shafiq Ur [2 ]
Bibi, Shamsa [2 ]
Ramay, Shahid M. [3 ]
Murtaza, Adil [4 ]
机构
[1] Univ Agr Faisalabad, Dept Phys, Faisalabad 38040, Pakistan
[2] Univ Agr Faisalabad, Dept Chem, Faisalabad 38040, Pakistan
[3] King Saud Univ, Coll Sci, Phys & Astron Dept, Riyadh, Saudi Arabia
[4] Xi An Jiao Tong Univ, Sch Sci, MOE Key Lab Nonequilibrium Synth & Modulat Conden, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
关键词
band structure; optoelectronic properties; thermoelectric properties; density of states; AB-INITIO; OPTICAL-PROPERTIES; CUBIC SRHFO3; 1ST-PRINCIPLES;
D O I
10.1088/2053-1591/ab6110
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic, optical and thermoelectric properties of LaAlO3 are studied under different pressure ranges (0-40 GPa) by using the full potential linear augmented plane wave method (FP-LAW). Calculations are done by Perdew-Burke-Ernzerhof generalized gradient approximation (PBEsol-GGA) by utilizing Wien 2k code. It was observed that with the increase of pressure band gap increased and the nature of band gap transform from indirect to direct. In Optical properties, optical conductivity, refractive index, absorption coefficient, and dielectric function are calculated at different pressures. Thermoelectric properties have been studied at temperature (150-800 K) and pressure (0-40 GPa) by using Boltz Trap code. At 800 K the values of power factor were 6.831 W K-2. cm. s and 22.13 W K-2. cm. s, respectively. Figure of merit was achieved up to 0.6. Results revealed that LaAlO3 is a suitable candidate for optoelectronic and thermoelectric devices.
引用
收藏
页数:7
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