RuRhMn and PtMn specular spin-valve with magnetic oxide layer

被引：3

作者：

Tsuchiya, Y ^{[1
]}

Li, SX ^{[1
]}

Sano, M ^{[1
]}

Uesugi, T ^{[1
]}

Araki, S ^{[1
]}

Morita, H ^{[1
]}

Matsuzaki, M ^{[1
]}

机构：

[1] TDK Corp, Data Storage Components Business Grp, Dept Res & Dev, Nagano 3850009, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

magnetoresistance; MOL; specular scattering; spin valve; thermal stability;

D O I：

10.1109/20.908508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, RuRhMn-based and PtMn-based spin valves with magnetic oxide layer (MOL) inserted in the free layer, pinned layer, or both lavers were studied. Both magnetoresistance (MR) ratio and DeltaR(sq) were increased in these spin valves, due to the insertion of MOL, Theoretical calculation based on semi-classical Boltzmann equation for transport indicated that the enhancement of MR ratio can be attributed to the strong specular scattering at interface with MOL. PtMn specular spin valves are more thermally stable than RuRhMn spin valves, Their thermal stability can de further improved by using a synthetic pinned layer with MOL, where the effective exchange field degrades less than 20% when the temperature is increased up to 350 degreesC.

引用

页码：2557 / 2559

页数：3

共 50 条

[31] Enhanced GMR in PtMn-based spin valves with specular reflective thin oxide layers
Sakakima, H
Satomi, M
Sugita, Y
Kawawake, Y
Adachi, H
IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) : 2554 - 2556
[32] Interplay between magnetic interactions in spin-valve structures
Rodríguez-Suárez, R.L.
Oliveira, A.B.
Rezende, S.M.
Azevedo, A.
Journal of Applied Physics, 2006, 99 (08):
[33] Modeling the Behavior and Magnetic Properties of Spin-Valve Nanostructures
Drovorub E.V.
Prudnikov V.V.
Prudnikov P.V.
Bulletin of the Russian Academy of Sciences: Physics, 2022, 86 (02) : 109 - 114
[34] A Spin-Valve Sensor in the Magnetic Field of a Moving Label
Babaytsev, G. V.
Chechenin, N. G.
Dzhun, I. O.
Romashkina, I. L.
Kozin, M. G.
Makunin, A. V.
MOSCOW UNIVERSITY PHYSICS BULLETIN, 2021, 76 (04) : 246 - 251
[35] Spin-valve effect in magnetic resonant tunneling devices
Chantis, AN
Demchenko, DO
Petukhov, AG
SPINTRONICS, 2002, 690 : 129 - 134
[36] A Spin-Valve Sensor in the Magnetic Field of a Moving Label
G. V. Babaytsev
N. G. Chechenin
I. O. Dzhun
I. L. Romashkina
M. G. Kozin
A. V. Makunin
Moscow University Physics Bulletin, 2021, 76 : 246 - 251
[37] Interplay between magnetic interactions in spin-valve structures
Rodriguez-Suarez, R. L.
Oliveira, A. B.
Rezende, S. M.
Azevedo, A.
JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
[38] Magnetic design and fabrication of linear spin-valve sensors
Qian, ZH
Daughton, JM
Wang, DX
Tondra, M
IEEE TRANSACTIONS ON MAGNETICS, 2003, 39 (05) : 3322 - 3324
[39] Nano-oxide-layer specular spin valve heads with synthetic pinned layer: Head performance and reliability
Hasegawa, N., 1600, American Institute of Physics Inc. (91):
[40] Spin-valve transistor
Huang, Y.W. (ydyao@phys.sinica.edu.tw), 1600, American Institute of Physics Inc. (97):

← 1 2 3 4 5 →