A high-sensitivity 135 GHz millimeter-wave imager by compact split-ring-resonator in 65-nm CMOS

被引：1

作者：

Li, Nan ^{[1
,2
]}

Yu, Hao ^{[1
]}

Yang, Chang ^{[1
]}

Shang, Yang ^{[1
]}

Li, Xiuping ^{[2
]}

Liu, Xiong ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing 100088, Peoples R China

[3] Northwestern Polytech Univ, Dept Elect Engn, Fremont, CA USA

来源：

SOLID-STATE ELECTRONICS | 2015年 / 113卷

基金：

中国国家自然科学基金;

关键词：

Metamaterial resonator; CMOS; 65; nm; Imaging system; Super regenerative receiver (SRX); METAMATERIAL RESONATOR; RECEIVER; OSCILLATOR; DESIGN; ARRAY;

D O I：

10.1016/j.sse.2015.05.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-sensitivity 135 GHz millimeter-wave imager is demonstrated in 65 nm CMOS by on-chip metamaterial resonator: a differential transmission-line (T-line) loaded with split-ring-resonator (DTL-SRR). Due to sharp stop-band introduced by the metamaterial load, high-Q oscillatory amplification can be achieved with high sensitivity when utilizing DTL-SRR as quench-controlled oscillator to provide regenerative detection. The developed 135 GHz mm-wave imager pixel has a compact core chip area of 0.0085 mm(2) with measured power consumption of 6.2 mW, sensitivity of -76.8 dBm, noise figure of 9.7 dB, and noise equivalent power of 0.9 fw/root H-z Hz. Millimeter-wave images has been demonstrated with millimeter-wave imager integrated with antenna array. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：54 / 60

页数：7

共 50 条

[21] A High-Sensitivity Potentiometric 65-nm CMOS ISFET Sensor for Rapid E. coli Screening
Jiang, Yu
Liu, Xu
Dang, Tran Chien
Huang, Xiwei
Feng, Hao
Zhang, Qing
Yu, Hao
IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS, 2018, 12 (02) : 402 - 415
[22] A millimeter-wave resistor-less pulse generator with a new dipole-patch antenna in 65-nm CMOS
Nguyen Ngoc Mai Khanh
Masahiro Sasaki
Kunihiro Asada
Analog Integrated Circuits and Signal Processing, 2012, 73 : 789 - 799
[23] A Reconfigurable Low-Voltage and Low-Power Millimeter-Wave Dual-Band Mixer in 65-nm CMOS
Zhu, Fang
Wang, Kuangda
Wu, Ke
IEEE ACCESS, 2019, 7 : 33359 - 33368
[24] A 39 GHz-80 GHz millimeter-wave frequency doubler with low power consumption in 65nm CMOS tehnology
Chen, Qian
An, Fazhi
Zhou, Guangyao
Ma, Shunli
Ye, Fan
Ren, Junyan
PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
[25] A Millimeter-Wave Variable-Gain Power Amplifier With $P_{{1,dB}}$ Improvement Technique in 65-nm CMOS
Luo, Xiongyao
Feng, Wenjie
Zhu, Haoshen
Wu, Liang
Che, Wenquan
Xue, Quan
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (12) : 1427 - 1430
[26] Characterization Methodology of a Millimeter-Wave 65nm CMOS PA Dedicated to 60GHz WPAN Standard
Aloui, Sofiane
Delaunay, Nicolas
Kerherve, Eric
Deltimple, Nathalie
Plana, Robert
Belot, Didier
2010 FIRST IEEE LATIN AMERICAN SYMPOSIUM ON CIRCUITS AND SYSTEMS (LASCAS), 2010, : 65 - 68
[27] A 110–140 GHz Millimeter-Wave VCO Using Varactor and Bulk Effective Technique in 65 nm CMOS Process
Shilan Neda
Ghader Yosefi
Abdollah Eskandarian
Wireless Personal Communications, 2020, 114 : 3367 - 3382
[28] A 230-GHz High-Power and Wideband Coupled Standing Wave VCO in 65-nm CMOS
Jalili, Hossein
Momeni, Omeed
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2020, 55 (03) : 547 - 556
[29] High-Data-Rate Single-Chip Battery-Free Active Millimeter-Wave Identification Tag in 65-nm CMOS Technology
Burasa, Pascal
Djerafi, Tarek
Constantin, Nicolas G.
Wu, Ke
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (07) : 2294 - 2303
[30] 60 GHz Millimeter-Wave Compact TFMS Bandstop Filter Using Transversal Resonator in 0.18-μm CMOS Technology
Vanukuru, Venkata Narayana Rao
Velidi, Vamsi Krishna
Chakravorty, Anjan
2014 IEEE INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC), 2014, : 248 - 250

← 1 2 3 4 5 →