Nd:YAG pulsed laser deposition of AlVO4 thin films on alumina and monocrystalline MgO

被引：3
|
作者：
Castro-Rodríguez, R
Peña, JL
Arés, O
Leccabue, F
Watts, BE
Melioli, E
机构：
[1] CINVESTAV, IPN, Dept Appl Phys, Merida 97310, Yuc, Mexico
[2] Univ La Habana, Fac Phys, IMRE, Superconduct Lab, Havana 10400, Cuba
[3] CNR, Ist IMEM, I-43100 Parma, Italy
来源：
MATERIALS LETTERS | 2005年 / 59卷 / 24-25期
关键词：
D O I：
10.1016/j.matlet.2005.05.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AlVO4 thin films were prepared by infrared Nd:YAG pulsed laser deposition on two,different substrates (polycrystalline Al2O3 and monocrystalline MgO). The distance between the target-substrate (30 mm) and the partial oxygen pressure (0.14 mbar) during the deposition process were chosen taking into account the previous experiences with other oxides. The substrate temperature was varied between 300 and 600 degrees C finding an optimum at about 400 degrees C. At higher temperatures, the vanadium seems to evaporate from substrate surface with a strong change of stoichiometry. Preferential growth of AlVO4 films in the direction (022), were grown on MgO substrates. A very high sensitivity of these films to a flux of NO2 gas is also shown. (C) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：3027 / 3032
页数：6
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