Effect of porogen residue on electrical characteristics of ultra low-k materials

被引：36

作者：

Baklanov, Mikhail R. ^{[1
]}

Zhao, Larry ^{[1
]}

Van Besien, Els ^{[1
]}

Pantouvaki, Marianna ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 06期

关键词：

Low-k; Porogen residue;

D O I：

10.1016/j.mee.2010.12.077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porogen residue (sp(2) hybridized carbon) formed during UV curing of low-k materials increases leakage current and decreases breakdown voltage of low-k materials. The amount of porogen residue increases with increasing porosity of PECVD low-k films because of larger amount of co-deposited porogen. Electrical characteristics of PECVD ultra low-k films are significantly worse in comparison with CVD and SOG low-k film prepared without porogen. SOG low-k films prepared by self-assembling of nanocrystalline silica demonstrate very low leakage current. Removal of porogen residue significantly improves the electrical characteristics. Therefore, preparation of porogen residue free low-k films is an important challenge of future scaling of low-k materials. (c) 2010 Elsevier B.V. All rights reserved.

引用

页码：990 / 993

页数：4

共 50 条

[41] SIMS studies of low-K materials
Lin, Xue-Feng
Smith, Stephen P.
THIN SOLID FILMS, 2006, 515 (03) : 1087 - 1092
[42] Integration of ultra low-k dielectrics for CMP
Jew, S.
Srivatsan, S.
Ramanujam, K.Y.
Jin, A.J.
European Semiconductor Design Production Assembly, 2002, 24 (02): : 45 - 46
[43] Porous ultra low-K dielectrics having ultra small
Zhong, B
Spaulding, M
Albaugh, J
Moyer, E
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U510 - U510
[44] Integration of Porogen-Based Low-k Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-k Damage and Reliability
De Roest, David
Vereecke, Bart
Huffman, Craig
Heylen, Nancy
Croes, Kristof
Arai, Hirofumi
Takamure, Noboru
Beynet, Julien
Sprey, Hessel
Matsushita, Kiyohiro
Kobayashi, Nobuyoshi
Verdonck, Patrick
Demuynck, Steven
Beyer, Gerald
Tokei, Zsolt
Struyf, Herbert
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FD031 - 05FD034
[45] Thermal conductivity of ultra low-k dielectrics
Delan, A
Rennau, M
Schulz, SE
Gessner, T
MICROELECTRONIC ENGINEERING, 2003, 70 (2-4) : 280 - 284
[46] Post Porosity Plasma Protection applied to a wide range of ultra low-k materials
Frot, T.
Volksen, W.
Magbitang, T.
Krupp, L.
Rice, P.
Purushothaman, S.
Lofaro, M.
Cohen, S.
Bruce, R. L.
Dubois, G.
2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2012,
[47] Current leakage relaxation and charge trapping in ultra-porous low-k materials
Borja, Juan
Plawsky, Joel L.
Lu, T. -M.
Bakhru, Hassaram
Gill, William N.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
[48] Neutral oxygen beam stripping of photo resist on porous ultra low-k materials
White, B
Wang, Q
Economou, D
Wolf, PJ
Jacobs, T
Fourcher, J
PROCEEDINGS OF THE IEEE 2003 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2003, : 153 - 155
[49] Materials issues and characterization of low-k dielectric materials
MRS Bull, 10 (49-54):
[50] Voiding in ultra porous low-k materials proposed mechanism, detection and possible solutions
Jacobs, T
Brennan, K
Carpio, R
Mosig, K
Lin, JC
Cox, H
Mlynko, W
Fourcher, J
Bennett, J
Wolf, J
Augur, R
Gillespie, P
PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2002, : 236 - 238

← 1 2 3 4 5 →