Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions

被引：19
|
作者：
Okumura, Tadashi [1 ]
Koguchi, Takayuki [1 ]
Ito, Hitomi [1 ]
Nishiyama, Nobuhiko [1 ]
Arai, Shigehisa [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 04期
关键词：
BH-DFB LASERS; SINGLE-MODE OPERATION; LOW-THRESHOLD; WAVELENGTH; SUBSTRATE;
D O I：
10.1143/APEX.4.042101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A current-injection-type semiconductor membrane distributed feedback laser consisting of a 470-nm-thick semiconductor core and bonded by a benzocyclobutene polymer on a silicon-on-insulator substrate was demonstrated for the first time by adopting a lateral current-injection structure. Room-temperature pulsed operation was achieved with a threshold current of 83mA for a stripe width of 3.2 mu m and cavity length of 420 mu m. (C) 2011 The Japan Society of Applied Physics
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