Improved structural quality of GaN nanowall network grown on pre-nitrided c-sapphire

被引：0
|
作者：
Thakur, Varun [1 ]
Nayak, Sanjay Kumar [1 ]
Nagaraja, K. K. [1 ]
Shivaprasad, S. M. [1 ]
机构：
[1] JNCASR, Chem & Phys Mat Unit, Jakkur PO 560064, Bangalore, Karnataka, India
来源：
2014 IEEE 2ND INTERNATIONAL CONFERENCE ON EMERGING ELECTRONICS (ICEE) | 2014年
关键词：
CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; NANOSTRUCTURES; NANOWIRES; SUBSTRATE; JUNCTIONS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present study, GaN nanowall network (NWN) structures are grown using rf-plasma assisted molecular beam epitaxy (PA-MBE) system under highly nitrogen rich conditions over nitrided and bare c-plane sapphire substrates. Nitridation is carried out prior to growth for two of the samples and its effect on the crystal quality of the resultant nanowall structure is studied and compared with the same structure grown on bare sapphire. It is found that nitriding the c-plane sapphire prior to growth results in an improvement of crystalline quality of the resulting nanowall as observed by the reduction in FWHM of (0002) XRC.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] The chemistry of sapphire nitridation in relation to the GaN structural quality:: Why low temperature 200°C nitridation?
    Losurdo, M
    Capezzuto, P
    Bruno, G
    Namkoong, G
    Doolittle, WA
    Brown, AS
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 561 - 565
  • [42] Improved structural quality of AIN grown on sapphire by 3D/2D alternation growth
    Guo, Yanmin
    Fang, Yulong
    Yin, Jiayun
    Zhang, Zhirong
    Wang, Bo
    Li, Jia
    Lu, Weili
    Feng, Zhihong
    JOURNAL OF CRYSTAL GROWTH, 2017, 464 : 119 - 122
  • [43] Influence of barium doping on structural and magnetic properties of c-ZnO epitaxial layers grown on c-GaN/sapphire templates
    Saroj, Rajendra K.
    Kaushik, S. D.
    Chopra, S.
    Dhar, S.
    THIN SOLID FILMS, 2019, 691
  • [44] Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy
    A. A. Donskov
    L. I. Dyakonov
    Yu. P. Kozlova
    S. S. Malakhov
    M. V. Mezhennyi
    V. F. Pavlov
    T. G. Yugova
    Crystallography Reports, 2011, 56
  • [45] Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy
    Donskov, A. A.
    Dyakonov, L. I.
    Kozlova, Yu. P.
    Malakhov, S. S.
    Mezhennyi, M. V.
    Pavlov, V. F.
    Yugova, T. G.
    CRYSTALLOGRAPHY REPORTS, 2011, 56 (02) : 274 - 281
  • [46] Improvement of GaN thin-film quality grown on patterned sapphire substrate by high-temperature pre-growth treatment
    Wang, Hong, 1600, Editorial Office of Chinese Optics (35):
  • [47] Structural and optical characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane sapphire substrates
    Yu, HB
    Chen, H
    Li, DS
    Zhou, JM
    CHINESE PHYSICS LETTERS, 2004, 21 (07) : 1323 - 1326
  • [48] Improved a-plane GaN quality grown with flow modulation epitaxy and epitaxial lateral overgrowth on r-plane sapphire substrate
    Huang, Jeng-Jie
    Shen, Kun-Ching
    Shiao, Wen-Yu
    Chen, Yung-Sheng
    Liu, Tzu-Chi
    Tang, Tsung-Yi
    Huang, Chi-Feng
    Yanga, C. C.
    APPLIED PHYSICS LETTERS, 2008, 92 (23)
  • [49] Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique
    Barick, B. K.
    Saroj, Rajendra Kumar
    Prasad, Nivedita
    Sutar, D. S.
    Dhar, S.
    JOURNAL OF CRYSTAL GROWTH, 2018, 490 : 104 - 109
  • [50] Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment
    Shiwei Song
    Rensheng Shen
    Hongwei Liang
    Yang Liu
    Xiaochuan Xia
    Kexiong Zhang
    Dechao Yang
    Dongsheng Wang
    Guotong Du
    Journal of Materials Science: Materials in Electronics, 2013, 24 : 3299 - 3302
12345