Examining the role of cure temperature on PDLC films prepared from high functionality monomers.

被引:0
|
作者
Rogue, RT
Bowman, CN
Natarajan, LV
Tondiglia, VP
Sutherland, RL
Bunning, TJ
机构
[1] USAF, Res Lab, MLPJ, Wright Patterson AFB, OH 45432 USA
[2] Sci Applicat Int Corp, Beavercreek, OH 45431 USA
[3] Univ Colorado, Dept Chem Engn, Boulder, CO 80309 USA
关键词
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
521-POLY
引用
收藏
页码:U155 / U155
页数:1
相关论文
共 50 条
  • [31] The role of the annealing temperature on the microstructural evolution of CuSbS2 thin films prepared by cationic exchange
    Ramirez-Esquivel, O. Y.
    Mazon-Montijo, D. A.
    Montiel-Gonzalez, Z.
    Aguirre-Tostado, F. S.
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 185 : 392 - 398
  • [32] XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomers
    Berjoan, R.
    Biche, E.
    Perarnau, D.
    Roualdes, S.
    Durand, J.
    Journal De Physique. IV : JP, 1999, 9 pt 2 (08): : 8 - 1059
  • [33] High-performance graphene films for thermal management and electromagnetic shielding prepared through high-temperature annealing
    Yu, Jing
    Lin, Weizhi
    Cheng, Hao
    Zhang, Qin
    Chen, Feng
    COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2025, 715
  • [34] High-temperature electron emission from diamond films
    Shin, SH
    Fisher, TS
    Walker, DG
    Strauss, AM
    Kang, WP
    Davidson, JL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01): : 587 - 592
  • [35] The role of high-temperature island coalescence in the development of stresses in GaN films
    Böttcher, T
    Einfeldt, S
    Figge, S
    Chierchia, R
    Heinke, H
    Hommel, D
    Speck, JS
    APPLIED PHYSICS LETTERS, 2001, 78 (14) : 1976 - 1978
  • [36] High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering
    Guillen, C.
    Herrero, J.
    THIN SOLID FILMS, 2006, 515 (02) : 640 - 643
  • [37] Improved quality of high deposition rate a-Si:H films prepared at usual substrate temperature
    Alhallani, B
    Tews, R
    Suchaneck, G
    Rohlecke, S
    Kottwitz, A
    Schade, K
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 1063 - 1066
  • [38] High-temperature oxidation resistance of CrAlN thin films prepared by DC reactive magnetron sputtering
    Witit-anun, Nirun
    Buranawong, Adiorn
    JOURNAL OF METALS MATERIALS AND MINERALS, 2023, 33 (03):
  • [39] Temperature effect on high-frequency magnetic properties of Fe-Co films prepared by electrodeposition
    Yang, Xu
    Gong, Luqian
    Wei, Jianqiang
    Qiao, Liang
    Wang, Tao
    Li, Fashen
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (21)
  • [40] An averaging pixel structure using microcrystalline-silicon films prepared at high temperature for AMOLED displays
    Gaillard, Arc'hanmael
    Rogel, Regis
    Crand, Samuel
    Mohammed-Brahim, Tayeb
    Le Roy, Philippe
    Prat, Christophe
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2007, 15 (12) : 1137 - 1143