Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge

被引：8
|
作者：
Elfiky, Dalia [1 ]
Yamaguchi, Masafumi [1 ]
Sasaki, Takuo [1 ]
Takamoto, Tatsuya [2 ]
Morioka, Chiharu [3 ]
Imaizumi, Mitsuru [3 ]
Ohshima, Takeshi [4 ]
Sato, Shin-ichiro [4 ]
Elnawawy, Mohamed [5 ]
Eldesuky, Tarek [6 ]
Ghitas, Ahmed [7 ]
机构：
[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 4688511, Japan
[2] Sharp Co Ltd, Nara 6392198, Japan
[3] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan
[4] Japan Atom Energy Res Agcy, Takasaki, Gunnma 3701292, Japan
[5] Cairo Univ, Fac Sci, Giza 12613, Egypt
[6] Ain Shams Univ, Fac Women Sci & Culture, Cairo 11361, Egypt
[7] Natl Inst Astron & Geophys Res, Cairo 11421, Egypt
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 12期
关键词：
SOLAR-CELLS; CARRIER GENERATION; PROTON RADIATION; RECOMBINATION; DIODES; DAMAGE; SI;
D O I：
10.1143/JJAP.49.121202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs solar cells with the lower base carrier concentration under low energy proton irradiations had shown experimentally the better radiation-resistance. Analytical model based on fundamental approach for radiative and non-radiative recombination has been proposed for radiation damage in GaAs sub-cells. The radiation resistance of GaAs sub-cells as a function of base carrier concentration has been analyzed by using radiative recombination lifetime and damage coefficient for minority carrier lifetime. Numerical analysis shows good agreement with experimental results. The effect of carrier concentration upon the change of damage constant and carrier removal rate have been studied. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.121202
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页数：5
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