Electron tunneling from quantum dots characterized by deep level transient spectroscopy

被引：17
|
作者：
Engstrom, O. [1 ]
Kaniewska, M.
Kaczmarczyk, M.
Jung, W.
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] Inst Electr Mat Technol, Dept Anal Semicond Nanostruct, PL-02668 Warsaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期
关键词：
D O I：
10.1063/1.2790846
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron tunneling from InAs/GaAs quantum dots has been studied by deep level transient spectroscopy (DLTS). Comparing DLTS data with theory, we demonstrate how the results can be interpreted for situations where the emission mechanism is pure tunneling. An illusory anomalous tunneling dependence on electric field is resolved by taking into account the energy level distribution originating from size fluctuations in the quantum dot ensemble. (C) 2007 American Institute of Physics.
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页数：3
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