New Semiconductor Materials and Devices for Terahertz Imaging and Sensing

被引：0

作者：

Otsuji, T. ^{[1
]}

Watanabe, T. ^{[1
]}

Akagawa, K. ^{[1
]}

Tanimoto, Y. ^{[1
]}

Tombet, S. Boubanga ^{[1
]}

Suemitsu, T. ^{[1
]}

Chan, S. ^{[2
,3
,4
]}

Coquillat, D. ^{[5
]}

Knap, W. ^{[5
]}

Ryzhii, V. ^{[6
]}

机构：

[1] Tohoku Univ, RIEC, Sendai, Miyagi 980, Japan

[2] Nano Japan Rice Univ, Houston, TX 77005 USA

[3] Tohoku Univ, Sendai, Miyagi, Japan

[4] Univ Penn, Philadelphia, PA 19104 USA

[5] Univ Montpellier 2, CNRS, GES Grp Etdue Semiconduecteurs, Montpellier, France

[6] Univ Aizu, Comp Nano Elect Lab CNEL, Aizu Wakamatsu, Fukushima, Japan

来源：

2011 IEEE SENSORS | 2011年

关键词：

GRAPHENE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent advances in materials and device structures for terahertz imaging and sensing technology are reviewed. The fundamental physical principle for terahertz imaging/sensing is focused on the nonlinear dynamics of plasmons in two-dimensional semiconductors including quantum wells in III-V based heterostructures as well as graphene.

引用

页码：44 / 47

页数：4

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