Single-photon emitters in GaSe

被引：80

作者：

Tonndorf, Philipp ^{[1
,2
]}

Schwarz, Stefan ^{[3
]}

Kern, Johannes ^{[1
,2
]}

Niehues, Iris ^{[1
,2
]}

Del Pozo-Zamudio, Osvaldo ^{[1
,2
]}

Dmitriev, Alexander I. ^{[4
]}

Bakhtinov, Anatoly P. ^{[4
]}

Borisenko, Dmitry N. ^{[5
]}

Kolesnikov, Nikolai N. ^{[5
]}

Tartakovskii, Alexander I. ^{[3
]}

de Vasconcellos, Steffen Michaelis ^{[1
,2
]}

Bratschitsch, Rudolf ^{[1
,2
]}

机构：

[1] Univ Munster, Dept Phys, D-48149 Munster, Germany

[2] Univ Munster, Ctr Nanotechnol, D-48149 Munster, Germany

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[4] NASU, IM Frantsevich Inst Problems Mat Sci, UA-142 Kiev, Ukraine

[5] RAS, Inst Solid State Phys, Chernogolovka 142432, Russia

来源：

2D MATERIALS | 2017年 / 4卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

single-photon emitter; layered semiconductor; transition metal monochalcogenide; GaSe; biexciton; strain; QUANTUM EMITTERS; EXCITONS; EMISSION; PHOTOLUMINESCENCE; ELECTRONS; LIGHT; SI;

D O I：

10.1088/2053-1583/aa525b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-photon sources are important building blocks for quantum information technology. Emitters based on solid-state systems provide a viable route to integration in photonic devices. Here, we report on single-photon emitters in the layered semiconductor GaSe. We identify the exciton and biexciton transition of the quantum emitters with power-dependent photoluminescence and photon statistics measurements. We find evidence that the localization of the excitons is related to deformations of the GaSe crystal, caused by nanoscale selenium inclusions, which are incorporated in the crystal. These deformations give rise to local strain fields, which induce confinement potentials for the excitons. This mechanism lights the way for the controlled positioning of single-photon emitters in GaSe on the nanoscale.

引用

页数：6

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