A vertical integrated optoelectronic chip for optical interconnect

被引：0

作者：

Liu, Kai ^{[1
]}

Huang, Yongqing ^{[1
]}

Duan, Xiaofeng ^{[1
]}

Wang, Qi ^{[1
]}

Ren, Xiaomin ^{[1
]}

Fan, Huize ^{[1
]}

Wei, Qi ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China

来源：

2017 16TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS & NETWORKS (ICOCN 2017) | 2017年

基金：

高等学校博士学科点专项科研基金; 中国国家自然科学基金;

关键词：

Optoelecfronic integration; VCSEL; PIN PD; Laser; Optical interconnect;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an integrated optoelectronic chip, which can transmit optical signal at 849.2nm and receive optical signal at 803nm, is proposed. It is constructed by integrating a VCSEL unit above a PIN-PD unit. Analysis show that, the VCSEL unit has a threshold current around lmA and a maximum output power around 1.2mW at 849.2nm, the PIN-PD unit has a highest absorption quantum efficiency above 70% at 803nm and a absorption range of 11nm where absorption quantum efficiency is higher than 60%. It can be applied to further improve the performance of optical interconnect system.

引用

页数：3

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