A vertical integrated optoelectronic chip for optical interconnect

被引:0
|
作者
Liu, Kai [1 ]
Huang, Yongqing [1 ]
Duan, Xiaofeng [1 ]
Wang, Qi [1 ]
Ren, Xiaomin [1 ]
Fan, Huize [1 ]
Wei, Qi [1 ]
机构
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing, Peoples R China
基金
高等学校博士学科点专项科研基金; 中国国家自然科学基金;
关键词
Optoelecfronic integration; VCSEL; PIN PD; Laser; Optical interconnect;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, an integrated optoelectronic chip, which can transmit optical signal at 849.2nm and receive optical signal at 803nm, is proposed. It is constructed by integrating a VCSEL unit above a PIN-PD unit. Analysis show that, the VCSEL unit has a threshold current around lmA and a maximum output power around 1.2mW at 849.2nm, the PIN-PD unit has a highest absorption quantum efficiency above 70% at 803nm and a absorption range of 11nm where absorption quantum efficiency is higher than 60%. It can be applied to further improve the performance of optical interconnect system.
引用
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页数:3
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