High Voc in (Cu,Ag)(In,Ga)Se2 Solar Cells

被引：78

作者：

Edoff, Marika ^{[1
]}

Jarmar, Tobias ^{[2
]}

Nilsson, Nina Shariati ^{[1
]}

Wallin, Erik ^{[2
]}

Hogstrom, Daniel ^{[2
]}

Stolt, Olof ^{[1
]}

Lundberg, Olle ^{[2
]}

Shafarman, William ^{[3
]}

Stolt, Lars ^{[1
,2
]}

机构：

[1] Uppsala Univ, Angstrom Solar Ctr, Div Solid State Elect, Angstrom Lab, S-75236 Uppsala, Sweden

[2] Solibro Res AB, S-75651 Uppsala, Sweden

[3] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2017年 / 7卷 / 06期

关键词：

ACIGS; (Ag; Cu)(Ga; In)Se-2; KF pdt; KF post deposition treatment; thin film solar cells; THIN-FILMS;

D O I：

10.1109/JPHOTOV.2017.2756058

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this contribution, we show that silver substitution for copper in Cu(In,Ga)Se-2 (CIGS) to form (Ag,Cu)(In, Ga)Se-2 (ACIGS) leads to a reduction of the voltage loss expressed as E-g/q-V-oc. This, in turn, leads to higher device efficiencies as compared to similar CIGS devices without Ag. We report V-oc at 814 mV at a conversion efficiency of 21% for our best ACIGS device with 20% of the group I element consisting of silver. Comparing ACIGS and CIGS devices with the same Ga/(Ga+ In) ratio, the ACIGS devices exhibit about 0.05 eV higher bandgap. Alkali postdeposition treatment with KF leads to improvements in efficiency both for CIGS and ACIGS, but we find that the dose of KF needed for optimum device for ACIGS is 10-20% of the dose used for CIGS.

引用

页码：1789 / 1794

页数：6

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