Electron and hole trapping in irradiated PbBr2:Tl single crystals

被引:0
|
作者
Stefan, M. [1 ]
Nistor, S. V. [1 ]
Darabont, A. [2 ]
Neamtu, C. [2 ]
Goovaerts, E. [3 ]
机构
[1] Natl Inst Mat Phys, Magurele 077125, Romania
[2] Natl Inst Isotop & Mol Technol, Cluj Napoca 400293, Romania
[3] Univ Instelling Antwerp, Dept Phys CDE, B-2610 Antwerp, Belgium
关键词
irradiation defects; ESR; PbBr2; Tl2+ centres;
D O I
10.1016/j.nimb.2008.03.179
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Several hole trapped centres, namely Tl2+, self-trapped hole and A-type centres, were observed by ESR in PbBr2:Tl single crystals after X-ray irradiation at 77 K. The corresponding spectra are visible up to 200 K for all three defect centres. The STH centres are observed at higher temperatures than in the undoped PbBr2 single crystals, probably due to the stabilising effect of the Tl+ impurities. The ESR parameters of the Tl2+ centre point to stronger covalency effects in PbBr2 than in the isostructural PbCl2 crystals. All hole trapped centres started decaying around 160 K, probably due to recombination with nonparamagnetic electron trapped centres. Besides a small concentration of self-trapped electron centres, no other electron trapped centres were observed. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:2758 / 2761
页数:4
相关论文
共 50 条
  • [31] EPR OF PB+ IONS AND EXCHANGE-COUPLED PB+ ION-PAIRS IN UV-IRRADIATED PBCL2 AND PBBR2 CRYSTALS
    KERSSEN, J
    DEGRUIJT.WC
    VOLGER, J
    PHYSICA, 1973, 70 (02): : 375 - 396
  • [32] POSITRON TRAPPING IN ELECTRON-IRRADIATED SILICON-CRYSTALS
    FUHS, W
    HOLZHAUER, U
    RICHTER, FW
    APPLIED PHYSICS, 1980, 22 (04): : 415 - 419
  • [33] GROWTH OF LARGE NEEDLES AND SINGLE-CRYSTALS OF PBCL2 AND PBBR2 IN SILICA-GEL - AN IMPROVEMENT OF THE NEW GEL TECHNIQUE
    ABDULKHADAR, M
    ITTYACHAN, MA
    CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (01) : 33 - 38
  • [34] ELECTRON AND HOLE TRAPPING IN IRRADIATED SIMOX, ZMR AND BESOI BURIED OXIDES
    STAHLBUSH, RE
    CAMPISI, GJ
    MCKITTERICK, JB
    MASZARA, WP
    ROITMAN, P
    BROWN, GA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (06) : 2086 - 2097
  • [35] ESR STUDY OF ELECTRON AND HOLE TRAPPING IN GAMMA-IRRADIATED PYREX
    BROWN, G
    JOURNAL OF MATERIALS SCIENCE, 1975, 10 (11) : 1841 - 1848
  • [36] Trapping centers and their distribution in Tl2In2Se3S layered single crystals
    Guler, I.
    Gasanly, N. M.
    SOLID STATE COMMUNICATIONS, 2010, 150 (3-4) : 176 - 180
  • [37] Defects in electron irradiated ZnO single crystals
    Hernández-Fenollosa, MA
    Damonte, LC
    Marí, B
    SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (4-6) : 336 - 343
  • [38] ELECTRON TRAPPING MECHANISMS IN AN IRRADIATED SINGLE-CRYSTAL OF QUARTZ
    CARROLL, DL
    DOERING, DL
    XIONGSKIBA, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 2312 - 2316
  • [39] Intrinsic emission and electron-hole trapping centers in irradiated Na2SO4
    Nurakhmetov, T. N.
    Salikhodzha, Zh. M.
    Zhunusbekov, A. M.
    Kainarbay, A. Zh.
    Daurenbekov, D. H.
    Alibay, T. T.
    Sadykova, B. M.
    Zhangylyssov, K. B.
    Yussupbekova, B. N.
    Tolekov, D. A.
    OPTIK, 2021, 242
  • [40] ELECTRON AND HOLE TRAPPING PROPERTIES OF LICL-PBCL2 AND LICL-TLCL CRYSTALS
    NISTOR, SV
    SCHOEMAKER, D
    REVUE ROUMAINE DE PHYSIQUE, 1988, 33 (4-6): : 781 - 785