Accuracy Analysis of Extraction Methods for Effective Channel Length in Deep-Submicron MOSFETs

被引：3
|
作者：
Kim, Ju-Young [1 ]
Choi, Min-Kwon [1 ]
Lee, Seonghearn [1 ]
机构：
[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin 449791, Kyungki Do, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2011年 / 11卷 / 02期
关键词：
MOSFET; effective channel length; capacitance; extraction; overlap; fringe;
D O I：
10.5573/JSTS.2011.11.2.130
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparative study of two capacitance methods to measure the effective channel length in deep-submicron MOSFETs has been made in detail. Since the reduction of the overlap capacitance in the accumulation region is smaller than the addition of the inner fringe capacitance at zero gate voltage, the capacitance method removing the parasitic capacitance in the accumulation region extracts a more accurate effective channel length than the method removing that at zero gate voltage.
引用
收藏
页码：130 / 133
页数：4
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