Structural and electrical properties of the GexSi1-x/Si heterojunctions obtained by the method of direct bonding

被引：5
|
作者：
Argunova, T. S. [1 ]
Belyakova, E. I.
Grekhov, I. V.
Zabrodskii, A. G.
Kostina, L. S.
Sorokin, L. M.
Shmidt, N. M.
Yi, J. M.
Jung, J. W.
Je, J. H.
Abrosimov, N. V.
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[3] Inst Crystal Growth, D-12489 Berlin, Germany
[4] Russian Acad Sci, Inst Problems Microelect Technol & Ultrahigh Pur, Chernogolovka 142432, Russia
来源：
SEMICONDUCTORS | 2007年 / 41卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063782607060127
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of studying the structural and electrical properties of structures produced by the method of direct bonding of GexSi1-x and Si wafers are reported. The wafers were cut from the crystals grown by the Czochralski method. Continuity of the interface and the crystal-lattice defects were studied by X-ray methods using synchrotron radiation and by scanning electron microscopy. Measurements of the forward and reverse current-voltage characteristics of the p-GexSi1-x /n-Si diodes made it possible to assess the effect of the crystallattice defects on the electrical properties of heterojunctions. Satisfactory electrical parameters suggest that the technology of direct bonding is promising for the fabrication of large-area GexSi1-x /Si heterojunctions.
引用
收藏
页码：679 / 683
页数：5
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