Luminescence of porous silicon in a weak confinement regime

被引：41

作者：

Polisski, G ^{[1
]}

Heckler, H ^{[1
]}

Kovalev, D ^{[1
]}

Schwartzkopff, M ^{[1
]}

Koch, F ^{[1
]}

机构：

[1] Tech Univ Munchen, Phys Dept E16, D-85747 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on luminescence properties of porous silicon emitting efficient light only a few tens of meV above the band gap of bulk Si. This emission band has a well-defined low-energy limit coincident with the position of the lowest possible luminescing exciton state of bulk silicon. The resonant photoluminescence spectrum exhibits all possible combinations of zero-phonon and momentum-conserving TA- and TO-phonon assisted absorption and exciton emission processes known for bulk silicon. We found that TO-phonon assisted processes give a major contribution to the light emission. We discuss the implications of these studies for the understanding of the origin of porous silicon photoluminescence. (C) 1998 American Institute of Physics. [S0003-6951(98)03734-6]

引用

页码：1107 / 1109

页数：3

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