Large-gap quantum anomalous Hall phase in hexagonal organometallic frameworks

被引:24
|
作者
Jin, Yuanjun [1 ,2 ]
Chen, Zhongjia [1 ,2 ,3 ]
Xia, Bowen [1 ,2 ]
Zhao, Yujun [3 ]
Wang, Rui [4 ,5 ]
Xu, Hu [1 ,2 ]
机构
[1] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
[2] Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
[3] South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
[4] Chongqing Univ, Inst Struct & Funct, Chongqing 400044, Peoples R China
[5] Chongqing Univ, Dept Phys, Chongqing 400044, Peoples R China
基金
中国国家自然科学基金;
关键词
REALIZATION; STATE;
D O I
10.1103/PhysRevB.98.245127
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nontrivial band gap plays a critical role in quantum anomalous Hall (QAH) insulators. In this work, we propose that the intrinsic QAH phase with sizable band gaps up to 367 meV is achieved in two-dimensional hexagonal organometallic frameworks (HOMFs). Based on first-principles calculations and effective model analysis, we uncover that these large band gaps in transition metal based HOMFs are opened by strong spin-orbital coupling of the localized 4d or 5d electrons. Importantly, we reveal that Coulomb correlations can further significantly enhance the nontrivial band gaps. In addition, we suggest a possible avenue to grow these organometallic QAH insulators on a semiconducting SiC(111) substrate, and the topological features are perfectly preserved due to the van der Waals interaction. Our work shows that the correlation remarkably enhances the nontrivial band gaps, providing exotic candidates to realize the QAH states at high temperatures.
引用
收藏
页数:5
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