Reverse Conduction Induced Dynamic Ron Effect in GaN HEMT with p-GaN Gate

被引：8

作者：

Sun, Shaoyu ^{[1
,2
]}

Xia, Ling ^{[3
]}

Wu, Wengang ^{[2
]}

Jin, Yufeng ^{[1
,2
]}

机构：

[1] Peking Univ, ShenZhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[3] Shenzhen Hai Li Technol Inc, Shenzhen 518100, Peoples R China

来源：

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年

关键词：

GaN; dynamic resistance; wireless power transfer; reverse-to-on mode;

D O I：

10.1109/EDTM50988.2021.9420891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reverse conduction of commercial GaN high electron mobility transistors (HEMT) for power applications, is found to induce significant dynamic ON resistance in some particular conditions, even though the commercial HEMTs show stable performance in normal operation modes. A test method is set up to evaluate dynamic R-on in this special mode. The conditions to activate the behavior are discussed. The cause of dynamic resistance is possibly due to traps located in gate region.

引用

页数：3

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