Dielectric and electric properties of donor- and acceptor-doped ferroelectric SrBi2Ta2O9

被引:0
|
作者
Kumar, MM [1 ]
Ye, ZG [1 ]
机构
[1] Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, Canada
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
Substitutions by aliovalent cations on the Sr2+ and Bi3+ sites of ferroelectric SrBi2Ta2O9 (SBT) have been carried out, which result in modified dielectric and electrical properties of SBT. The substitution of 10 mole % Fe3+ for Sr2+ shows an increase of 80 degreesC in T-C, whereas Ca2+ substitution for Bi3+ gives rise to diffused and frequency dispersive dielectric maxima with a relaxor-like behavior. The presence of Ca2+ in the (Bi2O2)(2+) layers appears to enhance the mobility of charge carriers thus increasing the bulk conduction of the sample. On the other hand, Fe3+ addition in the perovskite-like units results in a sharp dielectric anomaly at the ferroelectric phase transition, with a bulk conductance similar to that of pure SBT compound, but with a reduced space charge relaxation time. The low temperature conductivity mechanism shows a frequency dependence, which can be ascribed to the space charge mainly due to the oxygen vacancies. The dielectric and conductivity properties of the Ca2+-doped SBT make it a promising material for the fatigue resistance in device applications. (C) 2001 American Institute of Physics.
引用
收藏
页码:934 / 941
页数:8
相关论文
共 50 条
  • [21] Infrared optical properties of SrBi2Ta2O9 ferroelectric thin films
    Huang, ZM
    Yang, PX
    Chang, Y
    Chu, JH
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1771 - 1773
  • [22] Temperature dependence of ferroelectric properties of SrBi2Ta2O9 thin films
    Noguchi, T
    Hase, T
    Miyasaka, Y
    INTEGRATED FERROELECTRICS, 1997, 17 (1-4) : 57 - 65
  • [23] Studies on the fatigue properties of SrBi2Ta2O9 ferroelectric thin films
    Zhang, ZG
    Liu, JS
    Wang, YN
    Zhu, JS
    Yan, F
    Chen, XB
    Shen, HM
    FERROELECTRICS, 1999, 229 (1-4) : 171 - 176
  • [24] Dielectric and Piezoelectric Properties of Nonstoichiometric SrBi2Ta2O9 and SrBi2Nb2O9 Ceramics
    J. A. Cho
    S. E. Park
    T. K. Song
    M. H. Kim
    H. S. Lee
    S. S. Kim
    Journal of Electroceramics, 2004, 13 : 515 - 518
  • [25] Dielectric and piezoelectric properties of nonstoichiometric SrBi2Ta2O9 and SrBi2Nb2O9 ceramics
    Cho, JA
    Park, SE
    Song, TK
    Kim, MH
    Lee, HS
    Kim, SS
    JOURNAL OF ELECTROCERAMICS, 2004, 13 (1-3) : 515 - 518
  • [26] PREPARATION AND FERROELECTRIC PROPERTIES OF SRBI2TA2O9 THIN-FILMS
    AMANUMA, K
    HASE, T
    MIYASAKA, Y
    APPLIED PHYSICS LETTERS, 1995, 66 (02) : 221 - 223
  • [27] Crystal structure and ferroelectric properties of Si added SrBi2Ta2O9
    Idemoto, Y
    Takahashi, T
    Koura, N
    Loong, CK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6A): : 5091 - 5097
  • [28] The evaluation of SrBi2Ta2O9 films for ferroelectric memories
    Gutleben, CD
    FERROELECTRIC THIN FILMS V, 1996, 433 : 109 - 118
  • [29] Effects of silver doping on ferroelectric SrBi2Ta2O9
    Sih, B
    Jung, A
    Ye, ZG
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) : 3928 - 3935
  • [30] Investigations of structural, dielectric and ferroelectric behavior of europium substituted SrBi2Ta2O9 ferroelectric ceramics
    Coondoo, Indrani
    Jha, Arun K.
    SOLID STATE COMMUNICATIONS, 2007, 142 (10) : 561 - 565