Transport properties of boron-doped single-walled silicon carbide nanotubes

被引：40
|
作者：
Yang, Y. T. [1 ]
Ding, R. X. [1 ]
Song, J. X. [1 ,2 ]
机构：
[1] Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China
[2] Xian Shiyou Univ, Sch Elect Engn, Xian 710075, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 2011年 / 406卷 / 02期
关键词：
Boron-doped; Silicon carbide nanotubes; Transport properties; Non-equilibrium Green's function; MOLECULAR DEVICES;
D O I：
10.1016/j.physb.2010.10.046
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V. the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：216 / 219
页数：4
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