Spin effects in magnetoresistance induced in an n-InxGa1-xAs/GaAs double quantum well by a parallel magnetic field

被引：14
|
作者：
Yakunin, MV [1 ]
Al'shanskii, GA
Arapov, YG
Neverov, VN
Kharus, GI
Shelushinina, NG
Zvonkov, BN
Uskova, EA
de Visser, A
Ponomarenko, L
机构：
[1] Russian Acad Sci, Inst Met Phys, Ural Phys, Ekaterinburg 620219, Russia
[2] NI Lobachevskii State Univ, Inst Phys Res, Nizhnii Novgorod 603600, Russia
[3] Univ Amsterdam, Van Der Waals Zeeman Inst, Amsterdam, Netherlands
来源：
SEMICONDUCTORS | 2005年 / 39卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1852657
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magnetoresistance in n-InxGa1 - xAs/GaAs (x approximate to 0.18) heterostructures with double quantum wells (DQWs) was studied in the magnetic field parallel to the DQW layer. Specific features of the magnetoresistance, related to the passing of the tunnel gap edges across the Fermi level, are revealed and studied. Agreement between the calculated and experimental positions of the observed features is obtained when the spin splitting of the energy spectrum is taken into account. Earlier, similar features were observed in the magnetoresistance of n-GaAs/AlxGa1 - xAs DQW heterostructures, but the spin effects did not manifest themselves. (C) 2005 Pleiades Publishing, Inc.
引用
收藏
页码：107 / 112
页数：6
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