Dynamic photoluminescence lifetime imaging for the characterisation of silicon wafers

被引：27

作者：

Herlufsen, Sandra ^{[1
]}

Ramspeck, Klaus ^{[1
]}

Hinken, David ^{[1
]}

Schmidt, Arne ^{[1
]}

Mueller, Jens ^{[1
]}

Bothe, Karsten ^{[1
]}

Schmidt, Jan ^{[1
]}

Brendel, Rolf ^{[1
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 01期

关键词：

lifetime; Si; wafers; photoluminescence; imaging; PHOTOCONDUCTANCE;

D O I：

10.1002/pssr.201004426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a fast and calibration-free carrier lifetime imaging technique based on photoluminescence (PL) measurements using an InGaAs camera for the examination of crystalline silicon wafers. The carrier lifetime is determined from the time dependent luminescence emission after optical excitation. A ratio, including four PL images acquired at different times during the modulated excitation, is calculated and found to depend only on the camera integration time and the effective carrier lifetime. Therefore, the carrier lifetime is unambiguously determined by this ratio without knowing any additional wafer parameter. We demonstrate the applicability of the dynamic PL technique to multicrystalline silicon wafers. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：25 / 27

页数：3

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