LD end-pumped Nd: YVO4 high energy high beam quality 1064 nm picosecond laser with a semiconductor saturable absorber mirror

被引：4
|
作者：
He, Huan [1 ]
Liu, Xuesheng [1 ]
Song, Yiheng [2 ]
Wang, Congcong [1 ]
Cao, Mingzhen [1 ]
Yan, Anru [1 ]
Wang, Zhiyong [1 ]
机构：
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
[2] China Elect Technol Grp Corp, Res Inst 53, Tianjin 300000, Peoples R China
来源：
OPTIK | 2018年 / 175卷
基金：
国家重点研发计划;
关键词：
Solid-state laser; Laser seed source; End-pump laser; Picosecond laser;
D O I：
10.1016/j.ijleo.2018.08.130
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A high-power 808 nm diode-directly-pumped passively mode-locked 1064nm Nd:YVO4 laser was demonstrated with a semiconductor saturable absorber mirror (SESAM). Through theory analysis and carefully experimental optimization of laser mode radii in the laser crystal and on the SESAM. An average output power of 3.39 W and single pulse energy of 0.115 mu J was obtained with a pulse width of 16.3ps and a repetition rate of 29.36 MHz under a pump power of 8.92 W, corresponding to an optic-optic efficiency of 38.0% and the high beam quality in the x, y direction was 1.12 and 1.07, respectively.
引用
收藏
页码：172 / 176
页数：5
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