Temperature dependence of single-asperity friction for a diamond on diamondlike carbon interface

被引:21
|
作者
Dunckle, C. G. [1 ]
Altfeder, I. B. [2 ]
Voevodin, A. A. [2 ]
Jones, J. [2 ]
Krim, J. [3 ]
Taborek, P. [1 ]
机构
[1] Univ Calif Irvine, Irvine, CA 92697 USA
[2] USAF, Mat & Mfg Directorate, Res Lab, RXBT, Wright Patterson AFB, OH 45433 USA
[3] N Carolina State Univ, Raleigh, NC 27695 USA
关键词
atomic force microscopy; diamond; diamond-like carbon; friction; hysteresis; ATOMIC-FORCE MICROSCOPE; NANOTRIBOLOGY; SURFACES; SOLIDS; FILMS;
D O I
10.1063/1.3436564
中图分类号
O59 [应用物理学];
学科分类号
摘要
A variable temperature, ultrahigh vacuum atomic force microscope (AFM) was used to characterize interfacial friction for a single-asperity diamond contact on a diamondlike carbon (DLC) substrate over a nominal substrate temperature range of 90 to 275 K. Calibrated friction force measurements were obtained by analyzing lateral force hysteresis loops as a function of normal force. For sufficiently large normal forces, the lateral force was proportional to the normal force, and a friction coefficient mu could be identified. mu varied approximately linearly with substrate temperature, with mu=0.28 at T=90 K and mu=0.38 at 275 K. These results are compared to other recent variable temperature AFM friction measurements and to theoretical calculations based on the Tomlinson model. This comparison is obscured by large, experimentally uncontrolled temperature differences between the tip and the substrate which inevitably exist in conventional, variable temperature AFMs. A thermal model which can be used to quantitatively estimate these temperature differences is presented. (C) 2010 American Institute of Physics. [doi:10.1063/1.3436564]
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Simulations of the temperature dependence of static friction at the N2/Pb interface
    Brigazzi, M.
    Santoro, G.
    Franchini, A.
    Bortolani, V.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (30)
  • [42] Evolution of coefficient of friction with deposition temperature in diamond like carbon thin films
    Kataria, S.
    Dhara, Sandip
    Barshilia, Harish C.
    Dash, S.
    Tyagi, A. K.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (02)
  • [43] Structure original of temperature depended superlow friction behavior of diamond like carbon
    Wang, Dailian
    Gong, Zhenbin
    Jiang, Bangzheng
    Yu, Guomin
    Liu, Guangqiao
    Wang, Nong
    DIAMOND AND RELATED MATERIALS, 2020, 107
  • [44] TEMPERATURE DEPENDENCE OF INTERNAL FRICTION IN ALKALI-HALIDE SINGLE CRYSTALS
    BLISTANOV, AA
    SOIFER, YM
    SHASKOLS.MP
    SOVIET PHYSICS SOLID STATE,USSR, 1969, 10 (07): : 1549 - +
  • [45] Insights into friction dependence of carbon nanoparticles as oil-based lubricant additive at amorphous carbon interface
    Li, Xiaowei
    Xu, Xiaowei
    Zhou, Yong
    Lee, Kwang-Ryeol
    Wang, Aiying
    CARBON, 2019, 150 : 465 - 474
  • [46] Research Progress on Interface Adhesion and Friction Properties of Rubber/Diamond-like Carbon Composites
    Cui L.
    Sun L.-L.
    Guo P.
    Li H.
    Zhou J.-Y.
    Wang A.-Y.
    Surface Technology, 2023, 52 (03): : 75 - 90
  • [47] Dependence of the friction durability of extremely thin diamond-like carbon films on film thickness
    Miyake, Shojiro
    Inagaki, Junichi
    Miyake, Masatoshi
    WEAR, 2016, 356-357 : 66 - 76
  • [48] Atomic-scale friction between single-asperity contacts unveiled through in situ transmission electron microscopy (May, 10.1038/s41565-022-01126-z, 2022)
    Wang, Xiang
    Liu, Zhenyu
    He, Yang
    Tan, Susheng
    Wang, Guofeng
    Mao, Scott X.
    NATURE NANOTECHNOLOGY, 2022, 17 (07) : 799 - 799
  • [49] Polishing of polycrystalline diamond by the technique of dynamic friction, part 1: Prediction of the interface temperature rise
    Chen, Y
    Zhanga, LC
    Arsecularatne, JA
    Montross, C
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2006, 46 (06): : 580 - 587
  • [50] Temperature dependence of the barrier at the tetrahedral amorphous carbon-silicon interface
    Hastas, NA
    Dimitriadis, CA
    Logothetidis, S
    Angelis, CT
    Konofaos, N
    Evangelou, EK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (06) : 474 - 477