High efficiency silicon-germanium thin film solar cells using graded absorber layer

被引：39
|
作者：
Fan, Qi Hua [1 ]
Chen, Changyong [1 ]
Liao, Xianbo [1 ]
Xiang, Xianbi [1 ]
Zhang, Shibin [2 ]
Ingler, W. [1 ]
Adiga, Nirupama [1 ]
Hu, Zhihua [2 ]
Cao, Xinmin [2 ]
Du, Wenhui [2 ]
Deng, Xunming [1 ,2 ]
机构：
[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
[2] Xunlight Corp, Toledo, OH 43607 USA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 07期
关键词：
Amorphous silicon; Solar cell; Silicon-germanium; Chemical vapor deposition;
D O I：
10.1016/j.solmat.2010.03.006
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Amorphous silicon-germanium (a-SiGe) solar cells with graded Ge fraction along the film depth profile are deposited at elevated rate of 4 angstrom/s in a pressure range of 2-4 Torr. A properly graded GeH(4) flow pattern characterized by a low starting ratio of GeH(4):H(2) is the key towards achieving highly stable a-Si/a-SiGe tandem cells of 12.94% initial and 11.22% stable efficiencies. A fully laminated module with 38 x 38 mm(2) aperture area made from the tandem cell exhibits an initial efficiency of 10.81%, which shows that the high rate deposited a-Si/a-SiGe tandem cells are promising for practical module applications. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1300 / 1302
页数：3
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