High efficiency silicon-germanium thin film solar cells using graded absorber layer

被引：39

作者：

Fan, Qi Hua ^{[1
]}

Chen, Changyong ^{[1
]}

Liao, Xianbo ^{[1
]}

Xiang, Xianbi ^{[1
]}

Zhang, Shibin ^{[2
]}

Ingler, W. ^{[1
]}

Adiga, Nirupama ^{[1
]}

Hu, Zhihua ^{[2
]}

Cao, Xinmin ^{[2
]}

Du, Wenhui ^{[2
]}

Deng, Xunming ^{[1
,2
]}

机构：

[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA

[2] Xunlight Corp, Toledo, OH 43607 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 07期

关键词：

Amorphous silicon; Solar cell; Silicon-germanium; Chemical vapor deposition;

D O I：

10.1016/j.solmat.2010.03.006

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Amorphous silicon-germanium (a-SiGe) solar cells with graded Ge fraction along the film depth profile are deposited at elevated rate of 4 angstrom/s in a pressure range of 2-4 Torr. A properly graded GeH(4) flow pattern characterized by a low starting ratio of GeH(4):H(2) is the key towards achieving highly stable a-Si/a-SiGe tandem cells of 12.94% initial and 11.22% stable efficiencies. A fully laminated module with 38 x 38 mm(2) aperture area made from the tandem cell exhibits an initial efficiency of 10.81%, which shows that the high rate deposited a-Si/a-SiGe tandem cells are promising for practical module applications. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1300 / 1302

页数：3

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