On the modelling of multiconductor multilayer systems for interconnect applications

被引:6
|
作者
Ymeri, H
Nauwelaers, B
Maex, K
机构
[1] Katholieke Univ Leuven, Inst Kern Stralingsfys, ESAT, Div ESAT,TELEMIC, B-3001 Louvain, Belgium
[2] Interuniv Microelect Ctr, B-3001 Louvain, Belgium
关键词
interconnect; multiconductor transmission lines; semiconductors; inductance; capacitance;
D O I
10.1016/S0026-2692(01)00003-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated by using the dielectric Green's function and boundary integral equation approach. Presented is the case with an arbitrary number of dielectric layers and with zero-thickness conductors in the upper most layer. Since the method has been developed for application on microelectronic interconnect structures, we use the Galerkin method for constant charge distribution on the conductors to generate the numerical results. Since the silicon substrate has a substantial effect on the inductance parameter, it is taken into account to determine the transmission line parameters. Studies conducted here show that ignoring the silicon substrate leads to erroneous results in estimating the inductance parameter of the structure. Since the procedure is very efficient as well as accurate, it will be a very useful tool in the practical calculations for high-speed and high-density IC signal integrity verification. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:351 / 355
页数:5
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