Study of gallium-arsenide thin-film structure by means of triple-crystal X-ray diffractometry

A complex analysis of diffuse scattering (DS) of X-rays in thin gallium-arsenide films heavily doped with a silicon is carded out by means of triple-crystal diffractometry (Bragg case of diffraction) to reveal the microdefects of different sizes and concentration and to determing their nature (precipitates), The qualitative comparison of the calculated and measured maps of DS isolines near the fundamental (400) and quasi-forbidden (200) reciprocal-lattice point is performed. In some cases-for sections of the spatial distribution of DS-the quantitative agreement between the dynamical-statistical theory developed for homogeneously-distributed defects and experimental data is demonstrated.