ZnO Nanowires/CdS Nanorods Structure Grown on Silica Micropillars Array for Photosensitive Application

被引:1
|
作者
Liu, Jing [1 ]
Xu, Yuanze [1 ,2 ]
Liang, Xiaoxiao [1 ,2 ]
Yan, Mingming [1 ,2 ]
Wang, Bo [1 ]
Zhang, Tianchong [1 ]
Hong, Zhen [1 ,2 ]
Yi, Futing [1 ]
机构
[1] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
关键词
ZnO nanowires; CdS nanopillars; Silica micropillars; Photoresistor; GAS SENSOR; PERFORMANCE; FABRICATION;
D O I
10.1007/s13391-021-00312-w
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Utilizing silica micropillar arrays as substrate, a kind of Zinc oxide (ZnO) nanowires/Cadmium sulfide (CdS) nanopillars heterojunction structure is prepared successfully by twice hydrothermal reaction method. This ZnO nanowires/CdS nanorods/silica micropillars structure is tree-liked morphology from the SEM and TEM images, and both the ZnO nanowires and CdS nanorods are well crystallinity on the silica surface from the X-ray diffraction curves. The CdS nanorods/silica micropillars structure has a low reflectivity to the incoming light for wavelength from 200 to 800 nm. After the ZnO nanowires growing, the reflectivity of tree-liked structure is much lower than that without ZnO nanowires especially for the wavelength less than 350 nm. The resistance response of the CdS nanorods/silica micropillars based photoresistors with and without ZnO nanowires are tested. And the results reveal that the ZnO nanowires covering can improve the response of the CdS nanorods/silica micropillars photoresistors. The best photosensitivity response of the ZnO nanowires/CdS nanorods/silica micropillars photoresistor for 450 nm wavelength light with 5 mW/cm(2) illumination can achieve to 23.3, while that for CdS nanorods/silica micropillars photoresistors is 18.8. Graphic Abstract
引用
收藏
页码:507 / 512
页数:6
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