Fabrication of subwavelength aluminum wire grating using nanoimprint lithography and reactive ion etching

被引：67

作者：

Ahn, SW ^{[1
]}

Lee, KD ^{[1
]}

Kim, JS ^{[1
]}

Kim, SH ^{[1
]}

Lee, SH ^{[1
]}

Park, JD ^{[1
]}

Yoon, PW ^{[1
]}

机构：

[1] LG Elect Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 78-79卷

关键词：

nanoimprint lithography; nanopatterning; nanofabrication;

D O I：

10.1016/j.mee.2004.12.040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated subwavelength aluminum (Al) gratings with a period of 200 nm using nanoimprint lithography (NIL) and reactive ion etching (RIE). Al dry etching was attempted using the etch mask formed by NIL. The SiO2 stamp with a size of 5 x 5 cm(2) was fabricated using laser interference lithography and RIE. The NIL process was optimized on Al/glass substrate and various imprint resists were tested for the Al etching. We could obtain a vertical etching profile and an etch selectivity of 2 with mrI-8020 imprint resist. The Al RIE combined with NIL will be useful for the realization of subwavelength Al gratings with a high aspect ratio. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：314 / 318

页数：5

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